| Power Consumption (Active) | Average: 4.3W, Maximum: 5.9W (Burst mode) |
|---|---|
| Memory Components | V-NAND 3-bit MLC |
| Width | 22.15mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Form Factor | M.2 2280 |
| 4KB Random Write | QD1: 54 000 IOPS, QD32: 470 000 IOPS |
| Max Sequential Read | Up to 3100 MB/s |
| Capacity | 500GB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 80.15mm |
| 4KB Random Read | QD1: 17 000 IOPS, QD32: 400 000 IOPS |
| Model | MZ-V8V500BW |
| Series | Samsung 980 |
| Features | 300 TBW, Device Sleep Mode Support: Yes, Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive), GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T Support: Supported, TRIM Support: Supported |
| Interface | PCIe 3.0 x4 NVMe 1.4 |
| Power Consumption (Idle) | 45 mW |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 2600 MB/s |
| Height | 2.38mm |
| Weight | 8.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | Pablo |
SAMSUNG 980 M.2 2280 500GB PCI-Express 3.0 x4, NVMe 1.4 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V8V500BW
The SAMSUNG 980 M.2 2280 500GB SSD is a high-performance storage solution featuring PCI-Express 3.0 x4 and NVMe 1.4 for fast read and write speeds. With V-NAND 3-bit MLC technology, it offers reliable data storage and efficient performance. Key benefits include rapid loading times, enhanced responsiveness, and improved overall system performance, making it ideal for gaming, content creation, and heavy computing applications.
$Quote
| Power Consumption (Active)๏ผ | Average: 4.3W, Maximum: 5.9W (Burst mode) |
|---|---|
| Memory Components๏ผ | V-NAND 3-bit MLC |
| Width๏ผ | 22.15mm |
| Max Shock Resistance๏ผ | 1 500G & 0.5 ms (Half sine) |
| Form Factor๏ผ | M.2 2280 |
