SAMSUNG 980 M.2 2280 1TB PCI-Express 3.0 x4, NVMe 1.4 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V8V1T0BW

SamSung 980 1TB M.2 2280 NVMe PCIe 4.0 x4 MZ-V8V1T0BW

Power Consumption (Active):Average: 4.6W, Maximum: 5.3W (Burst mode)
Memory Components:V-NAND 3-bit MLC
Width:22.15mm
Max Shock Resistance:1 500G & 0.5 ms (Half sine)
Form Factor:M.2 2280
Power Consumption (Active)

Average: 4.6W, Maximum: 5.3W (Burst mode)

Memory Components

V-NAND 3-bit MLC

Width

22.15mm

Max Shock Resistance

1 500G & 0.5 ms (Half sine)

Form Factor

M.2 2280

4KB Random Write

QD1: 54 000 IOPS, QD32: 480 000 IOPS

Max Sequential Read

Up to 3500 MB/s

Capacity

1TB

Brand

SamSung

Used For

Consumer

Depth

80.15mm

4KB Random Read

QD1: 17 000 IOPS, QD32: 500 000 IOPS

Model

MZ-V8V1T0BW

Series

Samsung 980

Features

600 TBW, Device Sleep Mode Support: Yes, Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive), GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T Support: Supported, TRIM Support: Supported

Interface

PCIe 3.0 x4 NVMe 1.4

Power Consumption (Idle)

45 mW

MTBF

1 500 000 hours

Application

Desktop

Device Type

Internal Solid State Drive (SSD)

Products Status

New

Max Sequential Write

Up to 3000 MB/s

Height

2.38mm

Weight

8.00g

Operating Temperature

0C ~ +70C

Controller

Pablo

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