| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V8V1T0BW |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 1TB |
| Form Factor | M.2 2280 |
| Memory Components | V-NAND 3-bit MLC |
| Max Sequential Read | Up to 3500 MB/s |
| 4KB Random Read | QD1: 17 000 IOPS, QD32: 500 000 IOPS |
| 4KB Random Write | QD1: 54 000 IOPS, QD32: 480 000 IOPS |
| Depth | 80.15mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 22.15mm |
| Power Consumption (Active) | Average: 4.6W, Maximum: 5.3W (Burst mode) |
SAMSUNG 980 M.2 2280 1TB PCI-Express 3.0 x4, NVMe 1.4 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V8V1T0BW
The SAMSUNG 980 M.2 2280 1TB SSD is a high-performance storage solution featuring PCI-Express 3.0 x4 and NVMe 1.4 for fast read and write speeds. With 1TB capacity, it utilizes V-NAND 3-bit MLC technology for reliable data storage. Key benefits include rapid loading times, enhanced system responsiveness, and low power consumption. Its compact M.2 2280 form factor makes it ideal for thin and light devices, offering a seamless upgrade path for users seeking improved performance.
$Quote
| Brand๏ผ | SamSung |
|---|---|
| Products Status๏ผ | New |
| Model๏ผ | MZ-V8V1T0BW |
| Used For๏ผ | Consumer |
| Application๏ผ | Desktop |
