Power Consumption (Active) | Average: 6W, Maximum: 9W (Burst mode) |
---|---|
Memory Components | V-NAND 3-bit MLC |
Width | 22.15mm |
Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
Form Factor | M.2 2280 |
4KB Random Write | QD1: Up to 60 000 IOPS, QD32: Up to 550 000 IOPS |
Max Sequential Read | Up to 3500 MB/s |
Capacity | 1TB |
Brand | SamSung |
Used For | Consumer |
Depth | 80.15mm |
4KB Random Read | QD1: Up to 19 000 IOPS, QD32: Up to 600 000 IOPS |
Model | MZ-V7S1T0BW |
Series | Samsung 970 EVO PLUS |
Features | Always Evolving SSD, Design Flexibility, Exceptional Endurance, Level up Performance, Reliability: 600 TBW, Samsung Magician, The new standard in sustainable performance. The 970 EVO Plus provides exceptional endurance powered by the latest V-NAND technology and Samsung's reputation for quality., Unparalleled Reliability |
Cache | Samsung 1GB Low Power DDR4 SDRAM |
Interface | PCIe 3.0 x4 NVMe 1.3 |
Power Consumption (Idle) | Max. 30 mW |
MTBF | 1 500 000 hours |
Application | Desktop |
Device Type | Internal Solid State Drive (SSD) |
Products Status | New |
Max Sequential Write | Up to 3300 MB/s |
Height | 2.38mm |
Weight | 8.00g |
Operating Temperature | 0C ~ +70C |
Controller | Samsung Phoenix |
MZ-V7S1T0BW – SAMSUNG 970 EVO PLUS M.2 2280 1TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND 3-bit MLC Internal Solid State Drive (SSD)
SamSung PM981A/970 EVO plus 1TB M.2 2280 NVME PCIe 3.0 x4 MZ-V7S1T0BW
Power Consumption (Active): | Average: 6W, Maximum: 9W (Burst mode) |
---|---|
Memory Components: | V-NAND 3-bit MLC |
Width: | 22.15mm |
Max Shock Resistance: | 1 500G & 0.5 ms (Half sine) |
Form Factor: | M.2 2280 |