SAMSUNG 870 QVO Series 2.5″ 4TB SATA III Samsung V-NAND 4bit MLC Internal Solid State Drive (SSD) MZ-77Q4T0BW

Power Consumption (Active)：

3.2 W

Memory Components：

Samsung V-NAND 4bit MLC

Width：

100.00mm

Max Shock Resistance：

1500G

Form Factor：

2.5"

Power Consumption (Active)	3.2 W
Memory Components	Samsung V-NAND 4bit MLC
Width	100.00mm
Max Shock Resistance	1500G
Form Factor	2.5"
4KB Random Write	Up to 88 000 IOPS
Max Sequential Read	Up to 560 MB/s
Capacity	4TB
Brand	SamSung
Used For	Consumer
Depth	69.85mm
4KB Random Read	Up to 98 000 IOPS
Model	MZ-77Q4T0BW
Series	Samsung 870 QVO
Cache	Samsung 4 GB Low Power DDR4 SDRAM
Interface	SATA III
Power Consumption (Idle)	35 mW
MTBF	1 500 000 hours
Application	Desktop
Device Type	Internal Solid State Drive (SSD)
Products Status	New
Max Sequential Write	Up to 530 MB/s
Height	6.80mm
Weight	54.00g
Operating Temperature	0C ~ +70C
Controller	Samsung MKX Controller