Power Consumption (Active) | Average: 3.7W, Maximum: 5.6W (Burst mode) |
---|---|
Memory Components | V-NAND 3-bit MLC |
Width | 22.15mm |
Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
Form Factor | M.2 2280 |
4KB Random Write | QD1: 53 000 IOPS, QD32: 320 000 IOPS |
Max Sequential Read | Up to 2900 MB/s |
Capacity | 250GB |
Brand | SamSung |
Used For | Consumer |
Depth | 80.15mm |
4KB Random Read | QD32: 230 000 IOPS, QD1: 17 000 IOPS |
Model | MZ-V8V250BW |
Series | Samsung 980 |
Features | 150 TBW, Device Sleep Mode Support: Yes, Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive), GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T Support: Supported, TRIM Support: Supported |
Interface | PCIe 3.0 x4 NVMe 1.4 |
Power Consumption (Idle) | 45 mW |
MTBF | 1 500 000 hours |
Application | Desktop |
Device Type | Internal Solid State Drive (SSD) |
Products Status | New |
Max Sequential Write | Up to 1300 MB/s |
Height | 2.38mm |
Weight | 8.00g |
Operating Temperature | 0C ~ +70C |
Controller | Pablo |
SAMSUNG 980 M.2 2280 250GB PCI-Express 3.0 x4, NVMe 1.4 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V8V250BW
The SAMSUNG 980 M.2 2280 250GB SSD is a high-performance storage solution featuring PCI-Express 3.0 x4 and NVMe 1.4 for fast data transfer. With V-NAND 3-bit MLC technology, it offers a balance between capacity and performance. Key benefits include rapid loading times, enhanced system responsiveness, and low power consumption. Its compact M.2 2280 form factor makes it ideal for thin and light devices. Overall, it’s a reliable and efficient storage upgrade for PCs and laptops.
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Power Consumption (Active)๏ผ | Average: 3.7W, Maximum: 5.6W (Burst mode) |
---|---|
Memory Components๏ผ | V-NAND 3-bit MLC |
Width๏ผ | 22.15mm |
Max Shock Resistance๏ผ | 1 500G & 0.5 ms (Half sine) |
Form Factor๏ผ | M.2 2280 |