SAMSUNG 980 M.2 2280 500GB PCI-Express 3.0 x4, NVMe 1.4 V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V8V500BW

Power Consumption (Active)：	Average: 4.3W, Maximum: 5.9W (Burst mode)
Memory Components：	V-NAND 3-bit MLC
Width：	22.15mm
Max Shock Resistance：	1 500G & 0.5 ms (Half sine)
Form Factor：	M.2 2280

Power Consumption (Active)：

Average: 4.3W, Maximum: 5.9W (Burst mode)

Memory Components：

V-NAND 3-bit MLC

Width：

22.15mm

Max Shock Resistance：

1 500G & 0.5 ms (Half sine)

Form Factor：

M.2 2280

Power Consumption (Active)	Average: 4.3W, Maximum: 5.9W (Burst mode)
Memory Components	V-NAND 3-bit MLC
Width	22.15mm
Max Shock Resistance	1 500G & 0.5 ms (Half sine)
Form Factor	M.2 2280
4KB Random Write	QD1: 54 000 IOPS, QD32: 470 000 IOPS
Max Sequential Read	Up to 3100 MB/s
Capacity	500GB
Brand	SamSung
Used For	Consumer
Depth	80.15mm
4KB Random Read	QD1: 17 000 IOPS, QD32: 400 000 IOPS
Model	MZ-V8V500BW
Series	Samsung 980
Features	300 TBW, Device Sleep Mode Support: Yes, Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive), GC (Garbage Collection): Auto Garbage Collection Algorithm, S.M.A.R.T Support: Supported, TRIM Support: Supported
Interface	PCIe 3.0 x4 NVMe 1.4
Power Consumption (Idle)	45 mW
MTBF	1 500 000 hours
Application	Desktop
Device Type	Internal Solid State Drive (SSD)
Products Status	New
Max Sequential Write	Up to 2600 MB/s
Height	2.38mm
Weight	8.00g
Operating Temperature	0C ~ +70C
Controller	Pablo