| Memory Components | Samsung V-NAND 3-bit MLC |
|---|---|
| Width | 22.15mm |
| Max Shock Resistance | 1500G |
| Form Factor | M.2 2280 |
| 4KB Random Write | QD1: Up to 60 000 IOPS, QD32: Up to 1 000 000 IOPS |
| Max Sequential Read | Up to 7000 MB/s |
| Capacity | 1TB |
| Brand | SamSung |
| Used For | Consumer |
| Depth | 80.15mm |
| 4KB Random Read | QD1: Up to 22 000 IOPS, QD32: Up to 1 000 000 IOPS |
| Model | MZ-V8P1T0BW |
| Series | Samsung 980 PRO |
| Features | Reliability (TBW): 600TBW |
| Cache | Samsung 1GB Low Power DDR4 SDRAM |
| Interface | PCIe 4.0 x4 NVMe 1.3c |
| MTBF | 1 500 000 hours |
| Application | Desktop |
| Device Type | Internal Solid State Drive (SSD) |
| Products Status | New |
| Max Sequential Write | Up to 5000 MB/s |
| Height | 2.38mm |
| Weight | 9.00g |
| Operating Temperature | 0C ~ +70C |
| Controller | Samsung Elpis Controller |
SAMSUNG 980 PRO M.2 2280 1TB PCI-Express Gen 4.0 x4, NVMe 1.3c Samsung V-NAND 3-bit MLC Internal Solid State Drive (SSD) MZ-V8P1T0BW
SamSung 980PRO 1TB M.2 2280 NVMe PCIe 4.0 x4 MZ-V8P1T0BW
| Memory Components： | Samsung V-NAND 3-bit MLC |
|---|---|
| Width： | 22.15mm |
| Max Shock Resistance： | 1500G |
| Form Factor： | M.2 2280 |
| 4KB Random Write： | QD1: Up to 60 000 IOPS, QD32: Up to 1 000 000 IOPS |