| Brand | SamSung |
|---|---|
| Products Status | New |
| Model | MZ-V7S1T0B/AM |
| Used For | Consumer |
| Application | Desktop |
| Capacity | 1TB |
| Form Factor | M.2 2280 |
| Memory Components | V-NAND 3-bit MLC |
| Max Sequential Read | Up to 3500 MB/s |
| 4KB Random Read | QD1: Up to 19 000 IOPS, QD32: Up to 600 000 IOPS |
| 4KB Random Write | QD1: Up to 60 000 IOPS, QD32: Up to 550 000 IOPS |
| Depth | 80.15mm |
| Max Shock Resistance | 1 500G & 0.5 ms (Half sine) |
| Width | 22.15mm |
| Encryption | AES 256-bit Encryption (Class 0), TCG/Opal IEEE1667 (Encrypted drive) |
| Power Consumption (Active) | Average: 6W, Maximum: 9W (Burst mode) |
SAMSUNG 970 EVO PLUS M.2 2280 1TB PCIe Gen 3.0 x4, NVMe 1.3 V-NAND Internal Solid State Drive (SSD) MZ-V7S1T0B/AM
The Samsung 970 EVO PLUS 1TB M.2 NVMe SSD offers exceptional storage and speed, featuring PCIe Gen 3.0 x4 interface and V-NAND technology. Key benefits are:
– Up to 3500MB/s sequential read and 3300MB/s sequential write speeds.
– Enhanced performance for gaming, data analytics, and high-resolution video editing.
– Compact M.2 2280 design for easy upgrade in slim notebooks and desktops.
– NVMe 1.3 support ensures optimized data handling.
– Samsung’s renowned reliability and quality.
$Quote
| Brand๏ผ | SamSung |
|---|---|
| Products Status๏ผ | New |
| Model๏ผ | MZ-V7S1T0B/AM |
| Used For๏ผ | Consumer |
| Application๏ผ | Desktop |
